DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-04 | 8541290000 | TRANSISTOR, P / N IRFP4368PBF, MOSFET, N-CHANNEL CONTINUOUS FLOW CURRENT 350A, VOLTAGE SOURCE DRAIN 75B, a maximum temperature of 175 ° C, power dissipation BT 520, applied in automotive industry. DOES NOT CONTAIN THE FUNCTIONS: Encryption (K | *** | PHILIPPINES | 0.14 | 83,19 | *** | ***** | ***** |
2017-09-04 | 8541290000 | TRANSISTOR, P / N IPW60R017C7XKSA1, HIGH VOLTAGE MOSFET, the breakdown voltage of the drain-source of 600 V, the power dissipation 227VT applicable in fabrication of electronic Aparatura, server and telecommunication power supplies, adapters: LEU | *** | PHILIPPINES | 0.17 | 249,58 | *** | ***** | ***** |
2017-09-04 | 8541210000 | TRANSISTOR, P / N NX3008NBKS, MOS transistors, the number of channels 2, the breakdown voltage of the drain-source 30, continuous current LEAKAGE 350 MA - 1,4 SOURCE DRAIN RESISTANCE OM VOLTAGE gate-source 8, the minimum operating temperature - 55 C, MAX: Working | *** | PHILIPPINES | 0.24 | 606,13 | *** | ***** | ***** |
2017-09-04 | 8541210000 | TRANSISTOR, P / N BD140-16, a bipolar transistor BJT, the maximum voltage 80 V COLLECTOR emitter, collector voltage BASE 80 V BASE TENSION emitter 5 V, a maximum constant collector current 1,5A, gain-: WIDTH ON | *** | PHILIPPINES | 4.28 | 203,38 | *** | ***** | ***** |
2017-09-04 | 8541290000 | Transistors, EXCEPT phototransistor (SCRAP ELECTRIC) CLASSIFICATION CODE 63 4012, SM. ADDITION. TRANSISTORS Power Dissipation 2 W for surface mounting on printed circuit boards MACOM NO MRF275G 12 MACOM NPT1012 NO 10 | *** | PHILIPPINES | 0.68 | 6130,83 | *** | ***** | ***** |
2017-09-04 | 8541290000 | Transistors, EXCEPT phototransistor (SCRAP ELECTRIC) CLASSIFICATION CODE 63 4012, SM. ADDITION. TRANSISTORS Power Dissipation 2 W for surface mounting on printed circuit boards NXP NO MRFE6VS25LR5 6 | *** | PHILIPPINES | 0.01 | 661,04 | *** | ***** | ***** |
2017-09-05 | 8541210000 | Transistors, power dissipation 0.25W for the production of cash-handling equipment, 215: NOT SCRAP ELECTRIC, DO NOT WASTE; NOT WAR AND DO NOT DOUBLE PURPOSE; NOT for equipment operating in explosive atmospheres / NXP NXP BC817-40 9000 | *** | PHILIPPINES | 0.42 | 72 | *** | ***** | ***** |
2017-09-06 | 8541409000 | SEMICONDUCTOR photosensitive devices: Transistor Output Optocouplers (phototransistor). (NOT SCRAP ELECTRIC): VISHAY INTERTECHNOLOGY, INC. WITHOUT TRADEMARK B / N SFH6206-3T B / N 2000 | *** | PHILIPPINES | 1.2 | 318,63 | *** | ***** | ***** |
2017-09-06 | 8541210000 | P-CHANNEL POWER MOS TRANSISTORS "FDN5618P", C 0.5 Tu power dissipation, drain-source voltage 60 V, gate-source voltage 20B, Imp. Drain current 10A, Predna. FOR A current converters, switches, loads diagram of the control PI: TA | *** | PHILIPPINES | 0.13 | 165 | *** | ***** | ***** |
2017-09-06 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source of 200 V, 372 A LEAKAGE CURRENT, power dissipation | *** | PHILIPPINES | 36 | 10731 | *** | ***** | ***** |