DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-04 | 8542399010 | Integrated circuits: Electronic integrated circuits monolith - a driver controlled transistors widely used in industrial equipment NOT MILITARY and consumer electronics (NOT SCRAP ELECTRIC). Product weight | *** | VIETNAM | 0.22 | 182,13 | *** | ***** | ***** |
2017-09-04 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR 1W power dissipation for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel NXP SEMICONDUCTORS NXP BFG35.115 BFG35.115 | *** | VIETNAM | 1.26 | 2038,04 | *** | ***** | ***** |
2017-09-05 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR dissipation of 42W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container VISHAY INTERTECHNOLOGY INC. VISHAY IRFR22 | *** | VIETNAM | 0.67 | 194,57 | *** | ***** | ***** |
2017-09-05 | 8542399010 | Integrated circuits: Electronic integrated circuits monolith - a driver controlled transistors widely used in industrial equipment NOT MILITARY and consumer electronics (NOT SCRAP ELECTRIC). Packed in polymerase | *** | VIETNAM | 0.03 | 145,29 | *** | ***** | ***** |
2017-09-05 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,25VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel NEXPERIA BV NEXPERIA PDTC123ET.215 PDT | *** | VIETNAM | 0.85 | 172,34 | *** | ***** | ***** |
2017-09-05 | 8542399010 | Integrated circuits monolithic. MODEL "IR2133SPBF" -11 pcs. PRODUCT is a driver for controlling PAIR transistor constituting the transistor half-bridge with a maximum operating napryazhno to 625 volts. It formed as an integrated: Monolith | *** | VIETNAM | 0.04 | 76,41 | *** | ***** | ***** |
2017-09-05 | 8541210000 | TRANSISTOR. MODEL "FMMT459TA" -14 pcs. The product is a bipolar transistor NPN semiconductor-TYPE MAXIMUM power dissipation to 806 milli-watts and a voltage between the collector-emitter voltage to 500 volts. Is designed in: SO package | *** | VIETNAM | 0 | 4,83 | *** | ***** | ***** |
2017-09-05 | 8541290000 | TRANSISTOR. MODEL "IRF630NPBF" -112 PCS. The product is a field effect transistor with the maximum power DISPERSION to 82 watts and a voltage between the source-drain to 200 volts. Is designed in surface mount TO-220AB. : INTERN | *** | VIETNAM | 0.32 | 113,23 | *** | ***** | ***** |
2017-09-05 | 8542339000 | Integrated circuits MODEL "AD823ARZ" -48 pcs. The product is a two-channel amplifier With the field-effect transistor on a similar cascade and frequency range up to 16 MHz. : Formed as an integrated monolithic circuit in the surface mount package. WORKERS | *** | VIETNAM | 0.02 | 314 | *** | ***** | ***** |
2017-09-11 | 8518408009 | ELECTRICAL audio amplifier, a musical instrument and speakers: ELECTRICAL audio amplifier, a musical instrument and speakers: Transistor guitar combo amplifier. POWER 10 | *** | VIETNAM | 340.86 | 2753,79 | *** | ***** | ***** |