Transistor Import Data of Russia

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Our Russia shipment data of Transistor imports from Kazan helps in studying market size, value and price of Transistor imports into Russia. Get market research report based on importers, foreign exporters, trading partners, weight, qty and value wise analysis.

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DATE HS_CODE Product Description TrademarkCountry Net Weight Statistical Cost Place Shipper NameConsignee Name
2017-11-078541290000TRANSISTOR IRG4BC30FD-SPBF - FETs TIR (metal-insulator-conductor) Radio-electronic components of a semiconductor material other than the phototransistor, the power dissipation of 100 W, is designed to control the current inABSENT***23.859088,56KAZAN**********
2017-11-078542399090MICROCHIP IR2128SPBF - ANALOG integrated circuit power supplies. IS drivers for TIR and IGBT transistors. MAXIMUM offset voltage - 600 V; Maximum output current 250 NARASTANIYA- MA; Maximum output current 500 SPADA- MA;ABSENT***2.524137,86KAZAN**********
2017-11-078541290000TRANSISTOR SPW17N80C3FKSA1 - TRANSISTOR N-channel powerful FIELD. MADE IN TECHNOLOGY "METAL - OXIDE - SEMICONDUCTOR". MAXIMUM power dissipation - 227 Tues The breakdown voltage of the drain-source 800 W. Drain Current 17 A MAXIMUMABSENT***40.15810335,79KAZAN**********
2017-11-078541290000FIELD TRANSISTOR IRLR120NPBF TIR (metal- insulator - SEMICONDUCTOR) MOSFET, N-CHANNEL, high power (> 1W). TYPE OF MOUNTING - SURFACE. VOLTAGE Drain-Source Breakdown - 100 V; The breakdown voltage of the gate-source - 16 V; Power DissipationABSENT***1.332471,91KAZAN**********
2017-11-078541290000TRANSISTOR SPP20N65C3XKSA1 - TRANSISTOR N-channel, powerful, field. MADE IN TECHNOLOGY "METAL - OXIDE - SEMICONDUCTOR". TYPE OF MOUNTING - SURFACE. MAXIMUM power dissipation - 208 W; The breakdown voltage of the drain-source - 650; Drain currentABSENT***4.1222936,31KAZAN**********
2017-11-078541290000TRANSISTOR IRF7842PBF - TRANSISTOR N-channel, powerful, field. MADE IN TECHNOLOGY "METAL - OXIDE - SEMICONDUCTOR". TYPE OF MOUNTING - SURFACE. MAXIMUM POWER OF DISPERSION - 2.5 W; The breakdown voltage of the drain-source - 40 V; The drain current of 18 A.ABSENT***0.504338,7KAZAN**********
2017-11-078541290000TRANSISTOR IPB009N03LGATMA1 - TRANSISTOR N-channel, powerful, field. MADE IN TECHNOLOGY "METAL - OXIDE - SEMICONDUCTOR". TYPE OF MOUNTING - SURFACE. MAXIMUM power dissipation - 250 W; The breakdown voltage of the drain-source - 30 V; Drain currentABSENT***2.7451037,03KAZAN**********
2017-11-088541290000Parts for assemblage and repair of car amplifier audio frequency metal-oxide field effect transistors IRF 3205 MOSFET 200W (MOS METALL OCSIDE) 2600 PCS. SUPPLIED AS COMPONENTS for their own needs PREDPRIYATIYA.POGRESHNOST SHIPMENT +/- 5% of COPRIDEKOREA REPUBLIC OF5.2390KAZAN**********
2017-11-088541210000Parts for assemblage and repair of car amplifier audio frequency field-effect transistor 3198 TRANSISTOR 0,6W (FET FIELD EFFECT TRANSISTOR) 50pcs, 3112 TRANSISTOR 0,6W (FET FIELD EFFECT TRANSISTOR) 50pcs, A1381 TRANSISTOR 0,6W (FET FIELD EFFECT TRANSISTOPRIDEKOREA REPUBLIC OF0.0491,2KAZAN**********
2017-11-108541290000TRANSISTOR FQD19N10TM semiconductor metal-oxide-FILM WITH N-type channels are intended for use in the pulse converter voltage to power LED lamps produced by LLC "LEDEL". APPLY power supply (DRIVEABSENT***5.1452031,58KAZAN**********


Our transistor import data of Russia and market research report covers market priceof transistor and market share of Russian companies. This helps you to do market analysis on the basis of price, company, etc. efficiently and gain knowledge on market size of transistor in Russia. Few shipment records with a small number of important columns from Russia import data of transistor are given above. Other hidden fields such as Russian Importer Name with Address, Foreign Importer Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of transistor. To view more shipment records of transistor import data of Russia, you can set a filter by Country Name, HS Code and Place.

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