DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541210000 | N-channel MOS transistors operating under saturated ASSEMBLY WITH BLOCKS temperature protection, overcurrent protection and voltage is intended to distribute power to the Car Alarm System MOSFET drain-source voltage Transit | *** | GERMANY | 0.2 | 639,29 | *** | ***** | ***** |
2017-09-04 | 8541290000 | SEMICONDUCTOR DEVICES, TYPE SEMICONDUCTOR - silicon, used in the manufacture electronic modules and dresses for various devices: transistors, power dissipation 125 W: STMICROELECTRONICS STMICROELECTRONICS STMICROELECTRONICS BU931T absent | *** | GERMANY | 0.08 | 380,99 | *** | ***** | ***** |
2017-09-05 | 8541290000 | TRANSISTORS FOR SEMICONDUCTOR POWER BOOST, generating and converting electrical signals into INSTRUMENT: TYPE SEMICONDUCTOR - silicon oxide (SIO2), power dissipation 125W SEMICONDUCTOR TRANSISTORS FOR GAIN, AND GENERATION | *** | GERMANY | 2.7 | 72 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Transistors for PCB mounting, field P-channel, power dissipation 2 W: transistor for PCB mounting, field P-channel, power dissipation 2 W INTERNATIONAL RECTIFIER IR IRF5806TRPBF NO 100 | *** | GERMANY | 0.01 | 0,76 | *** | ***** | ***** |
2017-09-06 | 8541210000 | TRANSISTOR DESIGNED FOR USE IN TELECOMMUNICATIONS EQUIPMENT BIPOLAR NPN transistors, the maximum collector-emitter voltage 50V, maximum collector current of 800mA, the cutoff frequency of 150MHz, the power dissipation of 500 MW, HOUSING FOR | *** | GERMANY | 0.18 | 1699,29 | *** | ***** | ***** |
2017-09-11 | 8541290000 | Transistors for PCB mounting, field N-channel, power dissipation 1.25VT: transistors for PCB mounting, field N-channel, power dissipation 1.25VT INFINEON TECHNOLOGIES INFINEON IRLML2502TRPBF NO 20 | *** | GERMANY | 0.02 | 1,44 | *** | ***** | ***** |
2017-09-11 | 8541290000 | Transistors for PCB mounting, field N-channel, power dissipation 53VT: transistors for PCB mounting, field N-channel, power dissipation 53VT ON SEMICONDUCTOR ON SEMICONDUCTOR FQP20N06 NO 6 | *** | GERMANY | 0.01 | 0,44 | *** | ***** | ***** |
2017-09-11 | 8541290000 | SEMICONDUCTOR TRANSISTORS for use in the installation of electrical circuits, IS THE DEMOLITION EL / EQUIPMENT - MOSFETs, insulated gate, TYPE SEMICONDUCTOR - of N-CHANNEL, power 125 W, 10 V, RAB.TEMP. -55 - +150: GRAD | *** | GERMANY | 0.04 | 1,93 | *** | ***** | ***** |
2017-09-12 | 8541900000 | OF TRANSISTORS - BASE-metal transistor TO5, gold-plated:: designed for the production of semiconductor devices. GROSS WEIGHT from the pallet - 71.00 kg. ELECTROVAC HACHT & HUBER GMBH MISSING B1.022522PGDAP1 50000 | *** | GERMANY | 51 | 61843,72 | *** | ***** | ***** |
2017-09-12 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation 136 VT, the voltage source-drain 250, the drain current of 25 A, HULL TYPE TO-263-3, CLASSIFICATION CODE 3417831 is for use in switching power supply CONVERTING | *** | GERMANY | 0.17 | 141,26 | *** | ***** | ***** |