DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541290000 | Bipolar transistors power dissipation 313 BT MODEL SKW25N120, ARTICLE SKW25N120FKSA1 - 43 PCS. NOT SCRAP ELECTRIC, DO NOT WASTE. DATA products are used in telecommunications equipment. CUSTOM PACKAGING - TUBA. : "INFINEON" INFI | *** | JAPAN | 0.02 | 377,97 | *** | ***** | ***** |
2017-09-02 | 8541290000 | Semiconductor field-effect transistors are designed for use in power amplifiers TELECOMMUNICATIONS SECTORS / NOT SCRAP, WASTE NOT / NOT WAR, NOT DUAL-USE / NO for equipment operating in explosive atmospheres / SEMICONDUCTOR | *** | JAPAN | 4.84 | 74625,41 | *** | ***** | ***** |
2017-09-04 | 8541290000 | SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: N-channel MOSFET transistors TYPE SEMICONDUCTOR - silicon, the SRT-VOLTAGE SOURCE 65V output power of 60W, the working speed of 1GHz, power dissipation 79VT, drain current 7A. STMICROELECTRONICS NV | *** | JAPAN | 0.03 | 192,56 | *** | ***** | ***** |
2017-09-04 | 8541290000 | TRANSISTOR is used in the pre-output stage of radio transmitting equipment for power amplification, power dissipation 83.3 watts does not apply to means of fire control, have no function encryption (CRYPTOGRAPHY), transistors: TIM5964- | *** | JAPAN | 0.27 | 3447,52 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Transistors, EXCEPT phototransistor power dissipation 1 W: POWER MODULE IGBT (transistor) for frequency conversion AC EEKTROTOKA in engines, electrical PRIBORAHMOSCHNOST DISPERSION 1.3 KW, the maximum voltage COLLECT | *** | JAPAN | 87.76 | 25691,28 | *** | ***** | ***** |
2017-09-10 | 8541290000 | Transistors, phototransistor EXCEPT: SEMICONDUCTOR TRANSISTOR, for PCB mounting, POLUPROVODNIKA- TYPE SILICON, power dissipation 300W IXYS IXYS IXYS NO IXTA26P20P 200 | *** | JAPAN | 0.5 | 309,76 | *** | ***** | ***** |
2017-09-10 | 8541290000 | SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: MOSFET-TRANSISTORS, N-CHANNEL USED IN INSTRUMENT for surface mounting. TYPE SEMICONDUCTOR - SILICON, voltage 650 V, power dissipation of 660 Tues IXYS IXYS IXYS NO I | *** | JAPAN | 8.21 | 650,92 | *** | ***** | ***** |
2017-09-10 | 8541290000 | Semiconductor field-effect transistors are designed for use in power amplifiers telecommunications industry / NOT SCRAP, WASTE NOT, NOT MILITARY OR DUAL-USE NOT for equipment operating in explosive atmospheres / semiconductor | *** | JAPAN | 11.86 | 222812,68 | *** | ***** | ***** |
2017-09-12 | 8541290000 | MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 30 V | *** | JAPAN | 0.01 | 22,46 | *** | ***** | ***** |
2017-09-12 | 8541290000 | MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. Calculated on the breakdown voltage of 20 V, | *** | JAPAN | 0.01 | 19,42 | *** | ***** | ***** |