| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-05 | 3818009000 | Wafer in the form of discs 100 mm in diameter, thickness of up to 0.7mm MADE gallium arsenide (GAAS), on whose surface Apply epitaxial heterostructures FROM thin layers of gallium arsenide (GAAS) and aluminum arsenide gallium (: AL | *** | TAIWAN CHINA | 0.68 | 31394,35 | *** | ***** | ***** |
| 2017-09-06 | 3818001000 | Monocrystalline wafers FROM phosphorus-doped silicon, are not processed. PROVIDED FOR FURTHER multi-stage process in the manufacturing in order to obtain suitable vehicle for the manufacture of solar cells, NOT MILITARY: NEOBRAB | *** | CHINA | 1062 | 96019,44 | *** | ***** | ***** |
| 2017-09-07 | 3818001000 | DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer SI D200 PP + R10-13 / T5.5-6.5 diameter 200 mm, P + type (boron doped). INTENDED FOR USE IN THE PRODUCTION OF INTEGRATED CIRCUITS. SUM | *** | JAPAN | 2.6 | 4111,39 | *** | ***** | ***** |
| 2017-09-07 | 3818001000 | SILICON MONOKRISTALICHESKY doped In WAFERS without departing: IES 100 0.01 (111) -2500SHT, EFC 100 3-30 (111) -907SHT, KDB 100 0.03 (111) -150SHT... OOO "PROLOGUE SEMIKOR" Ukraine there is no 0 | *** | UKRAINE | 72.1 | 28038,5 | *** | ***** | ***** |
| 2017-09-11 | 3818001000 | High-resistivity silicon wafer. Diameter of 100 mm, thickness of 460 microns. SOURCE MATERIAL FOR MANUFACTURING CRYSTAL INTEGRATED CIRCUITS: GREAT ASCENT INTERNATIONAL LIMITED GREAT ASCENT INTERNATIONAL LIMITED 100 | *** | JAPAN | 2.4 | 7170 | *** | ***** | ***** |
| 2017-09-12 | 3818009000 | A semiconductor wafer of gallium arsenide-SHAPED discs with a diameter of 50.8 MM is intended for use as a raw material for the manufacture of semiconductor devices ELECTRONICS by spraying and superfine ultrapure semiconductors | *** | UNITED STATES | 1.35 | 1278,38 | Vilnius Lithuania | ***** | ***** |
| 2017-09-18 | 3818001000 | DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer MKRSY00B, 150MM, N-TYPE, <100>, PHOSPHORUS, 3,6 - 5,4 OHM-CM, 675 +/- 15UM, PRIME WAFER; Diameter: 150 mm; METHOD OF GROWING: CZ; CONDUCTIVITY TYPE: N; Went | *** | CHINA | 14.4 | 2955,47 | *** | ***** | ***** |
| 2017-09-18 | 3818001000 | DOPED SILICON, purification, monocrystalline, plate-shaped, polished, gratuitous POSTAKVA AS SAMPLES: silicon wafer MKRSY00B, 150MM, N-TYPE, <100>, PHOSPHORUS, 3,6 - 5,4 OHM-CM, 675 +/- 15UM, PRIME WAFER; Diameter: 150 mm; MET | *** | CHINA | 18 | 3789,85 | *** | ***** | ***** |
| 2017-09-20 | 3818001000 | Silicon wafer polishing, doped monocrystalline, electronics; Packed in CARTRIDGES / PO 25 PCS / VACUUM PACKAGES paved cardboard and foam insert: 6 "(150mm) of the plate (Appendix 85), the conductivity type N, DIAM.150 +/- 0.20 | *** | CHINA | 33.44 | 24076,5 | *** | ***** | ***** |
| 2017-09-22 | 3818001000 | DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer SI D200 P CZ100 R12 T725 WP07 is purified SILICON, monocrystalline, plate-shaped diameter 200 mm, p type (boron-doped) P | *** | JAPAN | 15.9 | 12861,65 | *** | ***** | ***** |