DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR 85W power dissipation for consumer electronic devices. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container TRANSISTOR SEMICONDUCTOR POWER PAC | *** | THAILAND | 2.2 | 333,4 | *** | ***** | ***** |
2017-09-08 | 8541409000 | Photosensitive semiconductor devices: a phototransistor FOR SEMICONDUCTOR consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). --Cartoned photovoltaic SEMICONDUCTOR | *** | THAILAND | 2.8 | 1634,04 | *** | ***** | ***** |
2017-09-08 | 8541100009 | SEMICONDUCTOR DIODES TYPE SEMICONDUCTOR - SILICON, ARE NOT photodiodes, light-emitting diodes are NOT, NOT SCRAP ELECTRIC: PIN DIODES SMD for use in the manufacture of electronic devices M / A-COM TECHNOLOGY SO | *** | THAILAND | 0.5 | 12495 | *** | ***** | ***** |
2017-09-09 | 8541100009 | DIODES - the semiconductor wafer is cut into the crystal (located in the same building) for devices of industrial electronics: DIODES GENERAL PURPOSE. REVERSE VOLTAGE 200V, maximum current CASE 3 A. DO-213AB. ARE NOT diode grounded IT | *** | THAILAND | 0.02 | 4,95 | *** | ***** | ***** |
2017-09-09 | 8541100009 | DIODES - the semiconductor wafer is cut into the crystal (located in the same building) for devices of industrial electronics: diodes Transient Voltage Suppressors (TVS). The breakdown voltage of 100 V. The voltage clamp 146 V. PEAK IMPU: MODULE | *** | THAILAND | 0.2 | 394,74 | *** | ***** | ***** |
2017-09-09 | 8541210000 | Bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 65 V, the maximum collector current of 100 mA. CASING SOT-23-3. Power dissipation 0.3 Tues. Located on the tape, packed in plastic bags. : ON SEMICONDU | *** | THAILAND | 0.01 | 0,8 | *** | ***** | ***** |
2017-09-09 | 8541210000 | PNP bipolar transistors TYPE SMD HELD FOR DEVICES INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 65 V, a collector current of 100 mA, the power dissipation of 0.3 TSR. CASING SOT-23-3. LOCATED ON TAPE PACKED: In | *** | THAILAND | 0.01 | 0,9 | *** | ***** | ***** |
2017-09-09 | 8541100009 | DIODES - the semiconductor wafer is cut into the crystal (located in the same building) for devices of industrial electronics: a Zener diode. Forward current of 5 mA, reverse voltage of 15 V. HOUSING SOT-23-3. ARE NOT diode grounders DEVICES: KO | *** | THAILAND | 0.01 | 1,11 | *** | ***** | ***** |
2017-09-09 | 8541210000 | MOSFETs with channel N / P SMD TYPE USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the source-drain 60, LEAKAGE CURRENT 0.51 A, the power dissipation of 0.96 CS. BODY SOIC-8. Located on the tape, the UPA: KO | *** | THAILAND | 0.02 | 24,64 | *** | ***** | ***** |
2017-09-09 | 8541210000 | MOSFETs with channel P type intended for devices of industrial electronics. Breakdown voltage of the drain-source of 100 V, LEAKAGE CURRENT 0.12 A 360 MW. CASING SOT-23-3. LOCATED in the tape, packed in a plastic bag. : MICROCHIP TECH | *** | THAILAND | 0.05 | 41,27 | *** | ***** | ***** |