DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR 85W power dissipation for consumer electronic devices. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container TRANSISTOR SEMICONDUCTOR POWER PAC | *** | THAILAND | 2.2 | 333,4 | *** | ***** | ***** |
2017-09-27 | 8541290000 | Transistors, EXCEPT phototransistor used in the system of industrial electronics bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 80 V, maximum collector current 1 A. CASE SOT-89-3. power dissipation | *** | THAILAND | 0.05 | 8,7 | *** | ***** | ***** |
2017-09-27 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFETs with channel N TYPE SMD USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source of 150 V, CURRENT LEAKAGE | *** | THAILAND | 0.13 | 69,1 | *** | ***** | ***** |
2017-09-27 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFETs with channel N TYPE SMD USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the source-drain 60, CURRENT LEAKAGE | *** | THAILAND | 0.08 | 19,04 | *** | ***** | ***** |
2017-09-27 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. The breakdown voltage of the drain-source 600 V, 7.3 A CURRENT LEAK, power 63 Tues. CDF | *** | THAILAND | 0.03 | 3,45 | *** | ***** | ***** |
2017-09-27 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the source-drain 60, 11 LEAKAGE CURRENT A POWER 1.9 TSR. CORP | *** | THAILAND | 0.06 | 19,5 | *** | ***** | ***** |
2017-09-27 | 8541290000 | Transistors, EXCEPT phototransistor used in the system of industrial electronics bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 50 V, the maximum collector current of 0.5 A. CASE SOT-89-3. POWER PAC | *** | THAILAND | 0.08 | 10,61 | *** | ***** | ***** |
2017-09-27 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFETs with channel N TYPE SMD USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the source-drain 60, CURRENT LEAKAGE | *** | THAILAND | 0.02 | 7,02 | *** | ***** | ***** |
2017-09-27 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFETs with channel N TYPE SMD USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. The breakdown voltage of the drain-source of 20 V, LEAKAGE CURRENT | *** | THAILAND | 0.04 | 11,37 | *** | ***** | ***** |