DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-01 | 8541100009 | Diode modules, PREDSTALYAET a pair of series-connected diodes, designed for installation in medical Idel - Apparatus of magnetic nerve stimulation MAGSTIM. Designed for those. SERVICE EQUIPMENT previously imported - APPARATUS "MAGSTIM | *** | JAPAN | 0.16 | 205,89 | *** | ***** | ***** |
2017-09-01 | 8541300009 | Thyristor units, which represent the two pairs of series-connected thyristors. Designed for installation in medical Idel - APPARATUS magnetic stimulation MAGSTIM. It imports for TEX. SERVICE EQUIPMENT previously imported - APPARATUS "MAGSTIM | *** | JAPAN | 0.68 | 424,38 | *** | ***** | ***** |
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: | INFINEON | *** | 64.022 | 8640 | ST PETERSBURG | ***** | ***** |
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 45 W | *** | CHINA | 0.02 | 24,8 | *** | ***** | ***** |
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 125 | *** | CHINA | 1.05 | 146 | *** | ***** | ***** |
2017-09-02 | 8541100009 | SEMICONDUCTOR DIODES FOR PCB, FOR USE IN RADIO ELECTRONIC APPARATUS SHALL CREATE ELECTROMAGNETIC INTERFERENCE: diode modules, max. VOLTAGE: 20 V, max. Current Rating: 8.2 A SEMIKRON ELECTRONICS PVT. LTD SEMIKRON SKKD9 | *** | CHINA | 2.04 | 162 | *** | ***** | ***** |
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: transistor assembly in the case of the module, which is a three-electrode | *** | CHINA | 1.98 | 291 | *** | ***** | ***** |
2017-09-02 | 8541409000 | Photosensitive semiconductor element which does not produce electromagnetic interference: The photosensors OPTICAL represent Optocouplers FROM emitter and receiver of the infrared signal, collected in a single surface mount package on the board. SENSITIVITY | *** | CHINA | 0 | 2 | *** | ***** | ***** |
2017-09-02 | 8541409000 | Photosensitive semiconductor element CREATE ELECTROMAGNETIC INTERFERENCE: Semiconductor photodiodes are intended for electronic equipment, SENSITIVITY 700 nm, 5 V TOSHIBA SEMICONDUCTOR (THAILAND) CO, LTD NO TC. | *** | CHINA | 0.02 | 105 | *** | ***** | ***** |
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, 150 V power dissipation | *** | CHINA | 1.4 | 156,15 | *** | ***** | ***** |