Memory Circuit Import Data of Russia

Search Russia Import Export Data at Shipment Level

Lookup import statistics of Memory Circuit under HS Code 8542326100, which Russia imports from Taiwan China. Study market price & market size of Memory Circuit along with market share of Russian companies importing Memory Circuit from Taiwan China

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DATE HS_CODE Product Description TrademarkCountry Net Weight Statistical Cost Place Shipper NameConsignee Name
2017-09-028542326100MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents FLASH MEMORY is approved for use in telecommunications equipment. MEMORY SIZE 8MBIT (512K X 16)***TAIWAN CHINA032,63*************
2017-09-068542326100Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, MEMORY 8 MBIT having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" Integrated circuits, monolithic, digital, flash-ELECT***TAIWAN CHINA15.582456,21*************
2017-09-078542326100MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents FLASH Memory capacity of 1 Mbit is approved for use in telecommunications equipment. supply voltage***TAIWAN CHINA0.026,87*************
2017-09-078542326100MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 16Mb is approved for use in telecommunications equipment. supply voltage***TAIWAN CHINA0.029,98*************
2017-09-078542326100MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 512 kbps is approved for use in telecommunications equipment. LIVE PIT***TAIWAN CHINA0.015,89*************
2017-09-078542326100Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, MEMORY 8 MBIT having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" Integrated circuits, monolithic, digital, flash-ELECT***TAIWAN CHINA38.545488,97*************
2017-09-108542326100MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 512 kbps is approved for use in telecommunications equipment. LIVE PIT***TAIWAN CHINA00,92*************
2017-09-138542326100MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents FLASH Memory capacity of 1 Mbit is approved for use in telecommunications equipment. supply voltage***TAIWAN CHINA0.0834,32*************
2017-09-138542326100Integrated circuits, monolithic, digital, flash electrically erasable programmable read-only memory (flash EEPROM) W25Q64JVSSIQ, VOLUME 64Mbit, 8-pin input voltage 2.7-3.6V, TV MODELS FOR PROM.SBORKI UE43LS003AUXRU, HAS 1107-002574 ***TAIWAN CHINA1.3684,12*************
2017-09-148542326100MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 512Mb is approved for use in telecommunications equipment. LIVE PIT***TAIWAN CHINA0.01121,5*************


Our memory circuit import data of Russia and market research report covers market priceof memory circuit and market share of Russian companies. This helps you to do market analysis on the basis of price, company, etc. efficiently and gain knowledge on market size of memory circuit in Russia. Few shipment records with a small number of important columns from Russia import data of memory circuit are given above. Other hidden fields such as Russian Importer Name with Address, Foreign Importer Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of memory circuit. To view more shipment records of memory circuit import data of Russia, you can set a filter by Country Name, HS Code and Place.

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