DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542323900 | Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR: UNI | *** | TAIWAN CHINA | 30.72 | 56860,8 | *** | ***** | ***** |
2017-09-01 | 8542323900 | Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR: UNI | *** | TAIWAN CHINA | 33.28 | 61599,2 | *** | ***** | ***** |
2017-09-02 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents FLASH MEMORY is approved for use in telecommunications equipment. MEMORY SIZE 8MBIT (512K X 16) | *** | TAIWAN CHINA | 0 | 32,63 | *** | ***** | ***** |
2017-09-04 | 8542319090 | Processors and controllers, whether or not combined with a memory device, converters, logic circuits, amplifiers, synchronizers or other schemes: a processor for mobile computers (INTEL CORE-I DESK I7-2600 3,40G PROCESS | *** | TAIWAN CHINA | 0.05 | 1258,64 | *** | ***** | ***** |
2017-09-04 | 8542329000 | Integrated circuits: Electronic integrated circuits monolith - a ferroelectric random access memory for widespread use in industrial equipment NOT MILITARY and consumer electronics (NOT SCRAP elect | *** | TAIWAN CHINA | 0.7 | 1100 | *** | ***** | ***** |
2017-09-04 | 8542329000 | Integrated circuits: Electronic integrated circuits monolith - a magnetoresistive memory device memory 4 megabits FOR INDUSTRIAL AUTOMATION (NOT SCRAP ELECTRIC ARE FREE software containing encryption and cryptography). Packed in poly | *** | TAIWAN CHINA | 0.01 | 128,54 | *** | ***** | ***** |
2017-09-05 | 8542323900 | Electronic integrated circuits, MODEL "EDB8132B4PB-8D-F" - 17 PCS. The product is a synchronous dynamic random access memory of 8 GB and operating frequency to 400MHz. Operating voltage up to 1.8 V.: formed as an integrated MES | *** | TAIWAN CHINA | 0.52 | 198,56 | *** | ***** | ***** |
2017-09-06 | 8542326900 | Integrated circuits - electrically erasable rewritable read-only memory VOLTAGE 2 Operating temperature from - 40 to + 85 MB MEMORY 32: XILINX WITHOUT TK B / M XCF32PVOG48C B / M 120 | *** | TAIWAN CHINA | 0.26 | 1991,39 | *** | ***** | ***** |
2017-09-06 | 8542327500 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, is a memory TYPE EEPROM 8K is approved for use in telecommunications equipment. voltage n | *** | TAIWAN CHINA | 0.01 | 2,48 | *** | ***** | ***** |
2017-09-06 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, MEMORY 8 MBIT having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" Integrated circuits, monolithic, digital, flash-ELECT | *** | TAIWAN CHINA | 15.58 | 2456,21 | *** | ***** | ***** |