DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-06 | 8542326900 | Integrated circuits - electrically erasable rewritable read-only memory VOLTAGE 2 Operating temperature from - 40 to + 85 MB MEMORY 32: XILINX WITHOUT TK B / M XCF32PVOG48C B / M 120 | *** | TAIWAN CHINA | 0.26 | 1991,39 | *** | ***** | ***** |
2017-09-07 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 8 GB is approved for use in telecommunications equipment. Supply voltage | *** | TAIWAN CHINA | 0.01 | 5 | *** | ***** | ***** |
2017-09-14 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 1 GB is approved for use in telecommunications equipment. Supply voltage | *** | TAIWAN CHINA | 0 | 135 | *** | ***** | ***** |
2017-09-14 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 16 GB is approved for use in telecommunications equipment. supply voltage | *** | TAIWAN CHINA | 0.01 | 5,5 | *** | ***** | ***** |
2017-09-15 | 8542326900 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, memory capacity 1 GB, do not have the encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" Integrated circuits, monolithic, digital, flash-electro | *** | TAIWAN CHINA | 33.62 | 11875,8 | *** | ***** | ***** |
2017-09-20 | 8542326900 | Integrated circuits, monolithic, digital, flash electrically erasable programmable read-only memory (flash EEPROM) F59L1G81MA-25TIG2Y, VOLUME 1 Gbit, 48-pin input voltage 2.7-3.6V, SIZE 20 * 12 * 1.2mm FOR PROM.SBORKI TV MODEL 1107 -002459 | *** | TAIWAN CHINA | 41 | 18449,09 | *** | ***** | ***** |
2017-09-28 | 8542326900 | OTHER integrated circuits, chips FLASH MEMORY: 4GB. DOES NOT CONTAIN encryption function and cryptographic algorithms. SANDISK CORPORATION SANDISK SANDISK SDIN7DP2-4G 2084 | *** | TAIWAN CHINA | 0.46 | 7460,72 | *** | ***** | ***** |
2017-09-29 | 8542326900 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 1.45 V Operating temperature from - 40 to + 95 2GB: ALLIANCE MEMORY WITHOUT TK B / M AS4C128M16D3LA-12BIN B / M 18 | *** | TAIWAN CHINA | 0.04 | 152,49 | *** | ***** | ***** |
2017-09-29 | 8542326900 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 3.6 V Operating temperature from - 40 to + 85 4GB: MICRON WITHOUT TK B / M MT29F4G01ADAGDWB-IT: G B / M 2 | *** | TAIWAN CHINA | 0 | 20,76 | *** | ***** | ***** |
2017-09-30 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 16 GB is approved for use in telecommunications equipment. supply voltage | *** | TAIWAN CHINA | 0.02 | 31,5 | *** | ***** | ***** |