DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR 85W power dissipation for consumer electronic devices. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container TRANSISTOR SEMICONDUCTOR POWER PAC | *** | THAILAND | 2.2 | 333,4 | *** | ***** | ***** |
2017-09-01 | 8541290000 | Transistors, phototransistor EXCEPT: Transistor SEMICONDUCTOR ASSEMBLY TYPE SEMICONDUCTOR - silicon, used in the manufacture electronic modules and dresses for various devices, power: 4 W DISPERSION NXP SEMICONDUCTORS NXP NXP NX745537715 | *** | CHINA | 1.8 | 40,14 | *** | ***** | ***** |
2017-09-03 | 8541290000 | Transistors, phototransistor EXCEPT: Transistor SEMICONDUCTOR ASSEMBLY TYPE SEMICONDUCTOR - silicon, used in the manufacture electronic modules and dresses for various devices, power: 4 W DISPERSION NXP SEMICONDUCTORS NXP NXP BONJHM5680 | *** | CHINA | 13.4 | 299,98 | *** | ***** | ***** |
2017-09-04 | 8541290000 | SEMICONDUCTOR DEVICES: Field transistors TYPE SEMICONDUCTOR - GAAS (gallium arsenide) is not a phototransistor, power dissipation 7,7VT, designed for use in industrial electronic power amplifier; NOT SCRAP: Electrical | *** | TAIWAN CHINA | 0.65 | 5716,32 | *** | ***** | ***** |
2017-09-04 | 8541290000 | SEMICONDUCTOR DEVICES, TYPE SEMICONDUCTOR - silicon, used in the manufacture electronic modules and dresses for various devices: transistor modules, power dissipation 30W: MITSUBISHI ELECTRIC MITSUBISHI MITSUBISHI RA30H4452M-101 is absent | *** | GERMANY | 1.18 | 667,59 | *** | ***** | ***** |
2017-09-04 | 8541290000 | SEMICONDUCTOR DEVICES, TYPE SEMICONDUCTOR - silicon, used in the manufacture electronic modules and dresses for various devices: transistors, power dissipation 125 W: STMICROELECTRONICS STMICROELECTRONICS STMICROELECTRONICS BU931T absent | *** | GERMANY | 0.08 | 380,99 | *** | ***** | ***** |
2017-09-04 | 8541290000 | SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: N-channel MOSFET transistors TYPE SEMICONDUCTOR - silicon, the SRT-VOLTAGE SOURCE 65V output power of 60W, the working speed of 1GHz, power dissipation 79VT, drain current 7A. STMICROELECTRONICS NV | *** | JAPAN | 0.03 | 192,56 | *** | ***** | ***** |
2017-09-04 | 8541290000 | Transistors - Semiconductor devices, for voltage up to 1000 V, power dissipation MORE 1W are used in electronic equipment, TOTAL - 16000SHT. :: KLS ELECTRONIC CO, LTD NOT MARKED HOTTECH 14000 KLS ELECTRONIC CO, LTD KLS 200 is not defined.. | *** | CHINA | 0.86 | 593,99 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS | ROHM, FARNELL, INFINEON, NEXPERIA | *** | 52.56 | 578,16 | MOSCOW | ***** | ***** |
2017-09-05 | 8541290000 | TRANSISTORS PURPOSE. Designed for use in amplifiers and generators of electronic devices. Power dissipation 10 Tues. Not for military purposes. HAVE encryption means (CRYPTOGRAPHY) TOTAL 108 PCS. : Transistors TRANSISTOR | *** | CHINA | 1.08 | 1106,07 | *** | ***** | ***** |